Semiconductor device for varying the mobility of electrons by li

Details Semiconductor device for varying the mobility of electrons by li Semiconductor device for varying the mobility of electrons by li

1993-08-30

1997-05-27

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 21, 257192, H01L 29205

Patent

active

056335121

ABSTRACT:
A semiconductor device in which a current is controlled by light includes a semiconductor member having a source unit and a drain unit and a channel unit through which electrons may flow between the source unit and the drain unit. The channel unit has a quantum well layer having a plurality of quantum energy levels and barrier layers provided adjacent to the well layer. Upon light irradiation of the quantum well layer, electrons make transitions between the different quantum energy levels, and the current flowing between the source unit and the drain unit is controlled by varying the mobility of these transitioned electrons.

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M. Yamanishi, et al., "Control of Quantum Interference Current Through Exchange Interaction Between Coherent Electron Waves and Photo-Excited Virtual Carriers", Hiroshima University , 1989 Science Lecture Conference, 27P-Z-1, Nov. 27, 1984 (with translation).
B.K. Levine, et al., "New 10 .mu.m Infrared Detector Using Intersubband Absorption in Resonant Tunneling GaAlAs Superlattices", Applied Physics Letters, pp. 1092-1094, Apr. 20, 1987.
S. Datta, et al., "Proposed Structure for Large Quantum Interference Effects", Applied Physics Letters, pp. 487-489, Feb. 17, 1986.
H. Sakaki, "Velocity-Modulation Transistor (VMT)--A New Field-Effect Transistor Concept", Japanese Journal Of Applied Physics, pp. L381-383, Jun. 1986.

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