Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1993-11-10
1995-05-02
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 20, 257 24, 257192, H01L 29161
Patent
active
054122236
ABSTRACT:
A semiconductor device exploiting a quantum interference effect is disclosed. The device comprises: a rod-shaped semiconductor portion extending in one direction; a prism-shaped semiconductor portion covering side faces of the rod-shaped semiconductor portion and extending in the one direction; and one or more source electrodes and one or more drain electrodes electrically connected to opposite ends of the prism-shaped semiconductor portion. Channels extend in the one direction in the prism-shaped semiconductor portion along a plurality of sides of side faces thereof. Alternatively, the prism-shaped semiconductor portion has a twisted structure about an axis extending in the one direction, and channels each having a twisted structure extend in the one direction in the prism-shaped semiconductor portion along a plurality of sides of side faces thereof.
REFERENCES:
patent: 5003360 (1991-03-01), Okada et al.
patent: 5130766 (1992-07-01), Arimoto et al.
patent: 5153688 (1992-10-01), Oda et al.
patent: 5157467 (1992-10-01), Fujii
patent: 5233205 (1993-08-01), Usagawa et al.
Ishibashi Akira
Ogawa Masamichi
Limanek Robert P.
Sony Corporation
Tran Minhloan
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