Semiconductor device formed on a substrate having an off-angle s

Details Semiconductor device formed on a substrate having an off-angle s Semiconductor device formed on a substrate having an off-angle s

1998-01-23

1999-09-21

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 15, 257 17, 257628, H01L 2906, H01L 2904

Patent

active

059557427

ABSTRACT:
A compound semiconductor device includes a compound semiconductor layer having an upper major surface formed with a multi-step structure, wherein said multi-step structure includes a plurality of steps each having a step height of at least 5 atomic layers and a step width of 300 nm or more.

REFERENCES:
patent: 5436468 (1995-07-01), Nakata et al.
patent: 5521404 (1996-05-01), Kikkawa et al.
patent: 5751028 (1998-05-01), Kikkawa
patent: 5762706 (1998-06-01), Saito et al.

Affiliated with

Also associated with

Rating

Semiconductor device formed on a substrate having an off-angle s does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device formed on a substrate having an off-angle s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device formed on a substrate having an off-angle s will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-82621