Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-07-13
2009-11-03
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S018000, C257S019000, C257S024000, C257S027000, C257SE29056
Reexamination Certificate
active
07612366
ABSTRACT:
A semiconductor device may include a stress layer and a strained superlattice layer above the stress layer and including a plurality of stacked groups of layers. More particularly, each group of layers of the strained superlattice layer may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
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Kreps Scott A.
Mears Robert J.
Allen Dyer Doppelt Milbrath & Gilchrist, P.A.
Hu Shouxiang
MEARS Technologies, Inc.
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