Semiconductor device having an active layer with regions with di

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

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257 96, 257627, 257628, 372 45, 372 46, H01L 3300, H01S 319

Patent

active

054183740

ABSTRACT:
A ridge or groove is formed on a major surface of a semiconductor substrate which is formed on a first electrode and whose major surface having a ridge or groove is slanted to a <110> crystal axis direction from a {001} crystal plane. A first semiconductor layer is formed on the semiconductor substrate, then a semiconductor function layer deviating from a {111} B crystal plane is formed on the first semiconductor layer, then a second semiconductor layer is formed on the semiconductor function layer and then a second electrode is formed on the second semiconductor layer. The ridge or groove extends to the <110> crystal axis direction, and at least one of the first semiconductor layer, the semiconductor function layer and the second semiconductor layer includes phosphorus.

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Narui et al, "Low Threshold AlGaAs BH Lasers Fabricated by One-Step MOCVD", Electronics Letters, 15th Sep. 1988, vol. 24, No. 19, pp. 1249-1250.
Morita et al, "Epitaxial Growth of GaInP on (111)A and (111)B Surfaces by Metalorganic Chemical Vapor Deposition", Journal of Crystal Growth, vol. 106, 1990, pp. 197-207.

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