Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1993-06-02
1995-05-23
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 96, 257627, 257628, 372 45, 372 46, H01L 3300, H01S 319
Patent
active
054183740
ABSTRACT:
A ridge or groove is formed on a major surface of a semiconductor substrate which is formed on a first electrode and whose major surface having a ridge or groove is slanted to a <110> crystal axis direction from a {001} crystal plane. A first semiconductor layer is formed on the semiconductor substrate, then a semiconductor function layer deviating from a {111} B crystal plane is formed on the first semiconductor layer, then a second semiconductor layer is formed on the semiconductor function layer and then a second electrode is formed on the second semiconductor layer. The ridge or groove extends to the <110> crystal axis direction, and at least one of the first semiconductor layer, the semiconductor function layer and the second semiconductor layer includes phosphorus.
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Morita et al, "Epitaxial Growth of GaInP on (111)A and (111)B Surfaces by Metalorganic Chemical Vapor Deposition", Journal of Crystal Growth, vol. 106, 1990, pp. 197-207.
Ishibashi Akira
Morita Etsuo
Tomiya Shigetaka
Yamamoto Tadashi
Limanek Robert P.
Sony Corporation
Tran Minhloan
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