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MOSFET using gate work function engineering for switching...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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MOSFET with a buried gate

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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MOSFET with a high permitivity gate dielectric

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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MOSFET with a refractory metal film, a silicide film and a nitri

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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MOSFET with a thin gate insulating film

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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MOSFET with a thin gate insulating film

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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MOSFET with a thin gate insulating film

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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MOSFET with a thin gate insulating film

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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MOSFET with a thin gate insulating film

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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MOSFET with assymetric lightly doped source-drain regions

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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Mosfet with buried contact and air-gap gate structure

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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Mosfet with buried element isolation regions

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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Mosfet with fully overlapped lightly doped drain structure and m

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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MOSFET with graded gate oxide layer

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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MOSFET with gradiently doped polysilicon gate electrode

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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MOSFET with high angle sidewall gate and contacts for...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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MOSFET with high dielectric constant gate insulator and...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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MOSFET with isolation structure and fabrication method thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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MOSFET with plural channels for punch through and threshold volt

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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MOSFET with raised STI isolation self-aligned to the gate stack

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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