MOSFET with a refractory metal film, a silicide film and a nitri

Details MOSFET with a refractory metal film, a silicide film and a nitri MOSFET with a refractory metal film, a silicide film and a nitri

1991-09-20

1993-06-22

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257383, 257413, 257755, 257764, H01L 2976, H01L 2348

Patent

active

052218538

ABSTRACT:
Selective deposition of a refractory metal on a silicon substrate utilizing high temperatures and a silane reduction process in which the flow rate ratio of silane to refractory metal halide gas is less than one. In a second embodiment, an additional layer of the refractory metal is deposited utilizing a hydrogen reduction of the metal halide gas at very high temperatures. In both embodiments, a refractory metal barrier layer may be provided by forming a self-aligned refractory metal silicide layer. Alternatively, a two layer self-aligned barrier is formed of a refractory metal silicide lower layer and a refractory metal nitride upper layer and the refractory metal is selectively deposited on the metal nitride.

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