MOSFET with a thin gate insulating film

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257368, H01L 2978

Patent

active

059905166

ABSTRACT:
A semiconductor device comprises: a p-type semiconductor substrate (1); an insulating film (3); a gate electrode (2) formed on the substrate via the insulating film; and an n-type source/drain region (5) formed on both sides of a channel forming region (4) located under the gate electrode (2) formed on the substrate (1). In particular, the thickness (T.sub.OX) of the insulating film (3) is determined to be less than 2.5 nm at conversion rate of silicon oxide film (silicon oxide equivalent thickness); a gate length (L.sub.g) of the gate electrode (2) is determined to be equal to or less than 0.3 .mu.m; and further a voltage applied to the gate electrode (2) and the drain region (6) is determined to be 1.5 V or less. Therefore, in the MOSFET having the tunneling gate oxide film (3), the reliability of the transistor under the hot carrier stress can be improved, and the gate leakage current can be reduced markedly, so that the transistor characteristics can be improved markedly.

REFERENCES:
patent: 4814851 (1989-03-01), Abrokwah et al.
patent: 5412527 (1995-05-01), Hisher
patent: 5436481 (1995-07-01), Egawa et al.
patent: 5463234 (1995-10-01), Toriumi et al.
patent: 5508543 (1996-04-01), Hartstein et al.
Momose, et al, "Tunneling Gate Oxide Approach to Ultra-High Current Drive in Small-Geometry MOSFETS", 1994 International Electron Devices Meeting, pp. 593-596.
Fiegna, et al, "A New Scaling Methodology for the 0.1-0.025 .mu.m MOSFET", 1993 Symposium on VLSI Technology, pp. 33-34.
Ono, et al, "Sub-50 nm Gate Length N-MOSFETS with 10 nm Phosphorus Source and Drain Junctions", 1993 International Electron Devices Meeting, pp. 119-122.

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