Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-07-29
1999-03-09
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257412, 257368, 438 3, 438287, 438591, 438592, H01L 35597
Patent
active
058805087
ABSTRACT:
A transistor formed on a semi-conductor substrate, where the transistor includes a gate dielectric layer formed on the semi-conductor substrate. The gate dielectric layer includes a silicon oxynitride sub-layer formed on the semi-conductor substrate and a dielectric sub-layer having relatively high permitivity to an oxide formed on the silicon oxynitride sub-layer. The transistor also includes a barrier layer formed on the gate dielectric layer and a metal gate is formed on the barrier layer. The gate dielectric layer, the barrier layer and the metal gate combine to form a gate structure. Side walls spacers are formed on side walls of the gate structure, and extended source, drain junctions are formed under the side wall spacers in the semi-conductor substrate and adjacent to the gate structure. The transistor also includes source and drain junctions formed in the gate structure next to the extended source, drain junctions.
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Bentley Dwayne L.
Chaudhuri Olik
Texas Instruments--Acer Incorporated
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