Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-04-12
2011-04-12
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S199000
Reexamination Certificate
active
07923787
ABSTRACT:
A MOSFET with an isolation structure is provided. An N-type MOSFET includes a first N-type buried layer and a P-type epitaxial layer disposed in a P-type substrate. A P-type FET includes a second N-type buried layer and the P-type epitaxial layer disposed in the P-type substrate. The first, second N-type buried layers and the P-type epitaxial layer provide isolation between FETs. In addition, a plurality of separated P-type regions disposed in the P-type epitaxial layer further provides an isolation effect. A first gap exists between a first thick field oxide layer and a first P-type region, for raising a breakdown voltage of the N-type FET. A second gap exists between a second thick field oxide layer and a second N-well, for raising a breakdown voltage of the P-type FET.
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patent: 7262471 (2007-08-01), Pan et al.
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Chien Tuo-Hsin
Huang Chih-Feng
Lin Jenn-Yu
Yang Ta-yung
Coleman W. David
J.C. Patents
System General Corp.
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