MOSFET using gate work function engineering for switching...

Details MOSFET using gate work function engineering for switching... MOSFET using gate work function engineering for switching...

2011-01-04

2011-01-04

Fahmy, Wael M (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257SE29257, C438S259000

Reexamination Certificate

active

07863675

ABSTRACT:
This invention discloses a new MOSFET device. The MOSFET device has an improved operation characteristic achieved by manufacturing a MOSFET with a higher gate work function by implementing a P-doped gate in an N-MOSFET device. The P-type gate increases the threshold voltage and shifts the C-Vds characteristics. The reduced Cgd thus achieves the purpose of suppressing the shoot through and resolve the difficulties discussed above. Unlike the conventional techniques, the reduction of the capacitance Cgd is achieved without requiring complicated fabrication processes and control of the recess electrode.

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