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Non-dissipative memory system

Static information storage and retrieval – Powering – Conservation of power
Patent

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Non-disturbing programming scheme for magnetic RAM

Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate

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Non-equal threshold voltage ranges in MLC NAND

Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate

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Non-erasable EPROM cell for redundancy circuit

Static information storage and retrieval – Hardware for storage elements – Shields
Patent

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Non-homogeneous shielding of an MRAM chip with magnetic...

Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate

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Non-homogeneous shielding of an MRAM chip with magnetic...

Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate

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Non-imprinting memory with high speed erase

Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate

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Non-imprinting memory with high speed erase

Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate

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Non-inverting non-volatile dynamic RAM cell

Static information storage and retrieval – Systems using particular element – Capacitors
Patent

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Non-linear charge pump

Static information storage and retrieval – Floating gate – Particular biasing
Patent

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Non-linear conductor memory

Static information storage and retrieval – Read only systems – Semiconductive
Reexamination Certificate

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Non-orthogonal MRAM device

Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate

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Non-orthogonal write line structure in MRAM

Static information storage and retrieval – Interconnection arrangements – Magnetic
Reexamination Certificate

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Non-real time reprogramming of non-volatile memory to...

Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate

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Non-refresh four-transistor memory cell

Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate

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Non-skipping auto-refresh in a DRAM

Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate

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Non-skipping auto-refresh in a DRAM

Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate

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Non-switching pre- and post- disturb compensational pulses

Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate

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Non-synchronous semiconductor memory device having page mode...

Static information storage and retrieval – Addressing – Sync/clocking
Reexamination Certificate

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Non-uniform programming pulse width for writing of...

Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate

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