Non-synchronous semiconductor memory device having page mode...

Static information storage and retrieval – Addressing – Sync/clocking

Reexamination Certificate

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C365S189020, C365S238500

Reexamination Certificate

active

07054224

ABSTRACT:
The present invention provides a non-synchronous semiconductor memory device configured as a pseudo-SRAM and capable of relaxing the limitation to address skew and improving the read rate. A data latch circuit110holds data having been read out of memory cells in a memory cell array106designated by a tow address included in an address ADD in a read mode. Upon transitions of column addresses A0, A1included in the address, a multiplexer111sequentially and non-synchronously feeds out the data held in the data latch circuit110based on the column addresses A0, A1.

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