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SRAM cell employing tunnel switched diode

Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate

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SRAM cell for soft-error rate reduction and cell stability...

Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate

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SRAM cell having asymmetric pass gates

Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate

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SRAM cell having increased cell ratio

Static information storage and retrieval – Systems using particular element – Flip-flop
Patent

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SRAM cell having load thin film transistors

Static information storage and retrieval – Systems using particular element – Flip-flop
Patent

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Sram cell structure

Static information storage and retrieval – Systems using particular element – Flip-flop
Patent

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SRAM cell structure and circuits

Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate

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SRAM cell using a CMOS compatible high gain gated lateral BJT

Static information storage and retrieval – Systems using particular element – Semiconductive
Patent

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SRAM cell using tunnel current loading devices

Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate

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SRAM cell using two single transistor inverters

Static information storage and retrieval – Systems using particular element – Flip-flop
Patent

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SRAM cell using word line controlled pull-up NMOS transistors

Static information storage and retrieval – Systems using particular element – Flip-flop
Patent

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SRAM cell utilizing bistable diode having GeSi structure therein

Static information storage and retrieval – Systems using particular element – Semiconductive
Patent

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SRAM cell with column select line

Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate

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SRAM cell with horizontal merged devices

Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate

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SRAM cell with independent static noise margin, trip...

Static information storage and retrieval – Systems using particular element – Flip-flop
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SRAM cell with intrinsically high stability and low leakage

Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate

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SRAM cell with p-channel pull-up sources connected to bit lines

Static information storage and retrieval – Systems using particular element – Flip-flop
Patent

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SRAM cell with read-disturb immunity

Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate

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SRAM cell with separate read and write ports

Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate

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SRAM cell without dedicated access transistors

Static information storage and retrieval – Systems using particular element – Flip-flop
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