SRAM cell utilizing bistable diode having GeSi structure therein

Details SRAM cell utilizing bistable diode having GeSi structure therein SRAM cell utilizing bistable diode having GeSi structure therein

1995-12-08

1997-11-04

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Semiconductive

365182, 257 15, 257903, G11C 1136, G11C 1134, H01L 2906, H01L 2711

Patent

active

056847378

ABSTRACT:
A static random access memory (SRAM) cell includes a bistable diode and a load device serially connectable between two voltage potentials (VDD, Ground) with a gate device (field effect transistor) connected between a bit line and a common terminal of the bistable diode and load device and a control terminal of the gate device connected to a word line. The bistable diode includes a GeSi structure between a p-doped semiconductor region and a spaced n-doped semiconductor region. The GeSi structure can be a GeSi/Si superlattice and a .delta.-doped tunnel junction, a Ge.sub.x Si.sub.1-x multiple well structure, or a .delta.-doped tunnel junction.

REFERENCES:
patent: 3626257 (1971-12-01), Esaki et al.
patent: 5032891 (1991-07-01), Takagi et al.

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