Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate
2007-08-28
2007-08-28
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Flip-flop
C365S161000, C365S226000
Reexamination Certificate
active
10906056
ABSTRACT:
An SRAM cell with gate tunneling load devices. The SRAM cell uses PFET wordline transistors and NFET cross-coupled transistors. The PFET wordline transistors are fully conductive during read operations, thus a full voltage level is passed through the PFET to the high node of the cell from the bitline. Tunnel current load devices maintain the high node of the cell at full voltage level during standby state.
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Abadeer Wagdi W.
Fifield John A.
Pilo Harold
International Business Machines - Corporation
Le Thong Q.
Sabo William D.
Schmeiser Olsen & Watts
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