LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes;

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state

Crucible for growing macrocrystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state

Crucible for growing single crystals, process for making the sam

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus

Crucible for preparing compound semiconductor crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state

Crucible for pulling silicon single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

Crucible for the growth of silicon single crystal and...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus

Crucible holder for pulling monocrystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus

Crucible made of carbon fiber-reinforced carbon composite...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state

Crucible or related object holder and method of manufacture

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state

Crucible support heater for the control of melt flow pattern in

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus

Crucible with differentially expanding release mechanism

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

Crucible with differentially expanding release mechanism

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus

Cruicible and growth method for polycrystal silicon using same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Crystal article and method for forming same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state – Using heat

Crystal article, method for producing the same and semiconductor

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing

Crystal diameter measuring device

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

Crystal face temperature determination means

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

Crystal film fabrication

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Crystal firm, crystal substrate, and semiconductor device

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state

Crystal forming apparatus and method for using same