Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state – Using heat
Patent
1994-10-24
1995-09-05
Kunemund, Robert M.
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from solid or gel state
Using heat
117 8, 117 9, 117913, 437 62, 437 83, C30B 106
Patent
active
054471176
ABSTRACT:
A crystal article comprises a substrate having an insulating amorphous surface and monocrystal formed on the substrate. The monocrystal is formed by providing a primary seed in the form of a film with an area 100 .mu.m.sup.2 or less arranged in a desired pattern on the surface of the substrate acting as a non-nucleation surface with a small nucleation density, then subjecting the primary seed to thermal treatment to convert it to a monocrystalline seed, and subsequently subjecting the monocrystalline seed to crystal growth treatment to allow a monocrystal to grow beyond the monocrystalline seed and cover the non-nucleation surface.
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patent: 5087296 (1992-02-01), Kondo et al.
patent: 5100691 (1992-03-01), Tokunaga et al.
Jastrzebski, "SOI by CVD: Epitaxial Lateral Overgrowth (ELO) Process-Review", J. Crystal Growth, vol. 63, 1983, pp. 493-526.
Nishigaki Yuji
Yamagata Kenji
Yonehara Takao
Canon Kabushiki Kaisha
Kunemund Robert M.
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