Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Patent
1995-07-18
1997-08-12
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
117 54, 117900, C30B 3500
Patent
active
056560770
ABSTRACT:
A method of preparing a compound semiconductor crystal in a crucible involves first forming a boron or boron compound containing layer on an inner surface of the crucible and heat treating the same to form a B.sub.2 O.sub.3 containing layer. The resulting preheated crucible is then employed for preparing the compound semiconductor crystal. By pretreating the crucible in this manner, it is possible to previously form a homogenous B.sub.2 O.sub.3 film on the crucible interior surface while preventing incomplete and heterogeneous coating of the B.sub.2 O.sub.3 film. Consequently, it is possible to prevent a raw material melt from wetting the crucible interior surface and thus to suppress polycrystallization, thereby preparing a compound semiconductor single crystal with an excellent yield.
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G. Ajithkumar et al., "A Crystal Growth System with modified pulling arrangement and temperature controller", 8056 Measurement Sci. & Tech. 5 (1994) Aug., No. 8, pp. 1018-1020.
Fasse W. F.
Fasse W. G.
Garrett Felisa
Sumitomo Electric Industries Co., Ltd.
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