Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1993-06-21
1994-11-01
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
B01D 904
Patent
active
053605993
ABSTRACT:
The present invention relates to a crucible support heater for the control of a melt flow pattern within a crucible, and more specifically to controlling a temperature gradient or distribution during crystal growth by the Czochralski method through the use of a heater located in the crucible lift rod.
REFERENCES:
patent: 3582526 (1971-06-01), Seale et al.
patent: 3798007 (1974-03-01), Bochman et al.
patent: 3870477 (1975-03-01), Labelle, Jr.
patent: 4224100 (1980-09-01), Hartzell
patent: 4609425 (1986-09-01), Mateika et al.
patent: 4654110 (1987-03-01), Morrison
patent: 4659421 (1987-04-01), Jewett
patent: 4687646 (1987-08-01), Mateika et al.
patent: 5057489 (1991-10-01), Parker et al.
patent: 5132091 (1992-07-01), Azad
patent: 5137699 (1992-08-01), Azad
patent: 5162072 (1992-11-01), Azad
patent: 5223077 (1993-06-01), Kaneko et al.
Azad Farzin H.
Cueman Michael K.
Breneman R. Bruce
Garrett Felisa
General Electric Company
Webb II Paul R.
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