Crystal firm, crystal substrate, and semiconductor device

Details Crystal firm, crystal substrate, and semiconductor device Crystal firm, crystal substrate, and semiconductor device

2007-01-31

2010-06-01

Kunemund, Robert M (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

C117S089000, C117S092000, C117S104000, C438S481000, C257S190000

Reexamination Certificate

active

07727331

ABSTRACT:
A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12) in between. The crystal layer (13) has spaces (13a), (13b) in an end of each threading dislocation D1elongating from below. The threading dislocation D1is separated from the upper layer by the spaces (13a), (13b), so that each threading dislocation D1is blocked from propagating to the upper layer. When the displacement of the threading dislocation D1expressed by Burgers vector is preserved to develop another dislocation, the spaces (13a), (13b) vary the direction of its displacement. As a result, the upper layer above the spaces (13a), (13b) turns crystalline with a low dislocation density.

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