Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing
Patent
1993-11-29
1995-01-03
Nelms, David C.
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
With means for measuring, testing, or sensing
250560, G01N 2186
Patent
active
053789008
ABSTRACT:
The growing portion of a single crystal 1 grown by the pull method is recorded and the image signal is output to a digitizing circuit 3 that converts the image signal into binary data. A memory device 4 stores the digitized images and the point P at the boundary between dark and light is detected by scanning the stored digitized images starting from the scanning-start pixel and proceeding in the direction parallel to the direction of single crystal pulling. The diameter D of the growing portion of the single crystal is determined based upon the boundary P, and the scanning-start pixel for the current operation is set at the pixel that is separated from the boundary Pb in the preceding operation by a preset number of pixels d in the opposite direction of the scan.
REFERENCES:
patent: 4794263 (1988-12-01), Katsuoka et al.
patent: 5138179 (1992-08-01), Baba et al.
patent: 5170061 (1992-12-01), Baba
Baba Masahiko
Hirano Yoshihiro
Nelms David C.
Shami K.
Shin-Etsu Handotai & Co., Ltd.
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