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Gallium nitride substrate and gallium nitride layer...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
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GaN single crystal substrate and method of making the same

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
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Germanium integrated CMOS wafer and method for manufacturing...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
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Group III-nitride semiconductor thin film, method for...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
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Growing [110] silicon on [001] oriented substrate with...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
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Growth method of a nitride III-V compound semiconductor,...

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Growth of GaN on sapphire with MSE grown buffer layer

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
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Growth of planar reduced dislocation density m -plane...

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Growth of reduced dislocation density non-polar gallium...

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