Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2007-04-24
2007-04-24
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S479000, C257SE21097
Reexamination Certificate
active
11140893
ABSTRACT:
A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m-plane GaN films are produced for use as substrates for polarization-free device growth.
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DenBaars Steven P.
Haskell Benjamin A.
McLaurin Melvin B.
Nakamura Shuji
Speck James Stephen
Gates & Cooper LLP
Jefferson Quovaunda
The Regents of the University of California
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