Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit
Reexamination Certificate
2007-10-23
2007-10-23
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
In integrated circuit
C257S355000, C257S356000, C257S357000, C257S358000, C257S370000, C257S378000
Reexamination Certificate
active
10905677
ABSTRACT:
A structure of an electrostatic discharge (ESD) device integrated with a pad is provided. The ESD device is integrated with the pad and formed under the pad. By using the area under the pad, the ESD device does not occupy additional space of an integrated circuit. Furthermore, since the pad is a large, plate, and ideal conductor, the connected pad and the ESD device are capable of distributing current in the ESD device averagely.
REFERENCES:
patent: 5828119 (1998-10-01), Katsube
patent: 6266222 (2001-07-01), Colombo et al.
patent: 2005/0133869 (2005-06-01), Ker et al.
Chien Tuo-Hsin
Huang Chih-Feng
Lin Jenn-yu G.
Yang Ta-yung
Chiu Tsz K.
Jianq Chyun IP Offices
System General Corp.
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