Electrostatic discharge protection circuit using a...

Details Electrostatic discharge protection circuit using a... Electrostatic discharge protection circuit using a...

2005-12-20

2008-10-14

Wilczewski, M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

In integrated circuit

C257S355000, C257S356000, C257S373000, C257S339000, C257S493000, C361S111000

Reexamination Certificate

active

07436041

ABSTRACT:
An ESD protection circuit using a double-triggered silicon controller rectifier (SCR). The double-triggered silicon controller rectifier (SCR) includes N+ diffusion areas, P+ diffusion areas, a first N-well region, a second N-well region and a third N-well region formed in a P-substrate. The N+ diffusion areas and the P+ diffusion areas are isolated by shallow trench isolation (STI) structures. Two of the N+ diffusion areas are N-type trigger terminals. Two of the P+ diffusion areas are the P-type trigger terminal.

REFERENCES:
patent: 6433979 (2002-08-01), Yu
patent: 6858901 (2005-02-01), Ker et al.

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