Semiconductor on insulator vertical transistor fabrication...

Details Semiconductor on insulator vertical transistor fabrication... Semiconductor on insulator vertical transistor fabrication...

2007-11-13

2007-11-13

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Plasma

C438S156000, C438S513000

Reexamination Certificate

active

11002965

ABSTRACT:
A process for conformally doping through the vertical and horizontal surfaces of a 3-dimensional vertical transistor in a semiconductor-on-insulator structure employs an RF oscillating torroidal plasma current to perform either conformal ion implantation, or conformal deposition of a dopant-containing film which can then be heated to drive the dopants into the transistor. Some embodiments employ both conformal ion implantation and conformal deposition of dopant containing films, and in those embodiments in which the dopant containing film is a pure dopant, the ion implantation and film deposition can be performed simultaneously.

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