Selective etch process of a sacrificial light absorbing...

Details Selective etch process of a sacrificial light absorbing... Selective etch process of a sacrificial light absorbing...

2007-11-27

2007-11-27

Tran, Binh X. (Department: 1765)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S072000, C216S074000, C438S725000, C438S736000

Reexamination Certificate

active

11535551

ABSTRACT:
A process of selectively etching a sacrificial light absorbing material (SLAM) over a dielectric material, such as carbon doped oxide, on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a hydrofluorocarbon gas, an optional hydrogen-containing gas, an optional fluorine-rich fluorocarbon gas, a nitrogen gas, an oxygen gas, and an inert gas. The process could provide a SLAM to a dielectric material etching selectivity ratio greater than 10:1.

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