Plasma reactor with heated source of a polymer-hardening precurs

Details Plasma reactor with heated source of a polymer-hardening precurs Plasma reactor with heated source of a polymer-hardening precurs

1996-05-13

2000-03-14

McDonald, Rodney

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 67, 216 74, 216 80, 156345, 20419232, 20419233, 20419235, H05H 100

Patent

active

060368772

ABSTRACT:
A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

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