Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2008-02-25
2010-02-09
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S506000, C438S514000, C438S766000, C438S508000
Reexamination Certificate
active
07659184
ABSTRACT:
In a plasma immersion ion implantation process, the thickness of a pre-implant chamber seasoning layer is increased (to permit implantation of a succession of wafers without replacing the seasoning layer) without loss of wafer clamping electrostatic force due to increased seasoning layer thickness. This is accomplished by first plasma-discharging residual electrostatic charge from the thick seasoning layer. The number of wafers which can be processed using the same seasoning layer is further increased by fractionally supplementing the seasoning layer after each wafer is processed, which may be followed by a brief plasma discharging of the supplemented seasoning before processing the next wafer.
REFERENCES:
patent: 5424222 (1995-06-01), Arndt
patent: 5543336 (1996-08-01), Enami et al.
patent: 6589868 (2003-07-01), Rossman
patent: WO 2007/105412 (2007-09-01), None
Patent Abstracts of Japan Japanese Publication No. JP08031752A, Published Feb. 2, 1996, Entitled Cleaning and Coating of Reaction Chamber of CVD System.
Foad Majeed A.
Hilkene Martin A.
Lai Canfeng
Porshnev Peter I.
Santhanam Kartik
Applied Materials Inc.
Law Office of Robert M. Wallace
Le Dung A.
LandOfFree
Plasma immersion ion implantation process with chamber... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Plasma immersion ion implantation process with chamber..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma immersion ion implantation process with chamber... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4205994