Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Plasma
Reexamination Certificate
2011-08-23
2011-08-23
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Plasma
C438S473000, C438S514000, C438S528000
Reexamination Certificate
active
08003500
ABSTRACT:
In a plasma immersion ion implantation process, the thickness of a pre-implant chamber seasoning layer is increased (to permit implantation of a succession of wafers without replacing the seasoning layer) without loss of wafer clamping electrostatic force due to increased seasoning layer thickness. This is accomplished by first plasma-discharging residual electrostatic charge from the thick seasoning layer. The number of wafers which can be processed using the same seasoning layer is further increased by fractionally supplementing the seasoning layer after each wafer is processed, which may be followed by a brief plasma discharging of the supplemented seasoning before processing the next wafer.
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U.S. Appl. No. 12/072,495, filed Feb. 25, 2008, Vellaikal et al.
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Foad Majeed A.
Hilkene Martin A.
Lai Canfeng
Porshnev Peter I.
Santhanam Kartik
Applied Materials Inc.
Le Dung A.
Wallace Robert M.
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