Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2006-12-08
2010-06-08
Coleman, W. David (Department: 2813)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C257SE21473
Reexamination Certificate
active
07732309
ABSTRACT:
Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, the method for implanting ions into a substrate by a plasma immersion ion implantation process includes providing a substrate into a processing chamber, supplying a gas mixture including a reacting gas and a reducing gas into the chamber, and implanting ions from the gas mixture into the substrate. In another embodiment, the method includes providing a substrate into a processing chamber, supplying a gas mixture including reacting gas and a hydrogen containing reducing gas into the chamber, and implanting ions from the gas mixture into the substrate.
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International Search Report and Written Opinion for PCT/US 07/86848, dated Apr. 30, 2008, consists of 10 pages.
Foad Majeed A.
Gallo Biagio
Lee Dong Hyung
Li Shijian
Ramaswamy Kartik
Applied Materials Inc.
Coleman W. David
McCall-Shepard Sonya D
Patterson & Sheridan
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