High deposition rate recipe for low dielectric constant films

Details High deposition rate recipe for low dielectric constant films High deposition rate recipe for low dielectric constant films

1997-06-03

2000-10-24

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438761, 438763, 438784, H01L 214763

Patent

active

061366854

ABSTRACT:
An insulating film with a low dielectric constant is more quickly formed on a substrate by reducing the co-etch rate as the film is deposited. The process gas is formed into a plasma from silicon-containing and fluorine-containing gases. The plasma is biased with an RF field to enhance deposition of the film. Deposition and etching occur simultaneously. The relative rate of deposition to etching is increased in the latter portion of the deposition process by decreasing the bias RF power, which decreases the surface temperature of the substrate and decreases sputtering and etching activities. Processing time is reduced compared to processes with fixed RF power levels. Film stability, retention of water by the film, and corrosion of structures on the substrate are all improved. The film has a relatively uniform and low dielectric constant and may fill trenches with aspect ratios of at least 4:1 and gaps less than 0.5 .mu.m.

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