Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-07-18
2006-07-18
Brewster, William M. (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S308000, C438S530000, C438S585000
Reexamination Certificate
active
07078302
ABSTRACT:
In one embodiment, the invention generally provides a method for annealing a doped layer on a substrate including depositing a polycrystalline layer to a gate oxide layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer. The method further includes exposing the doped polycrystalline layer to a rapid thermal anneal to readily distribute the dopant throughout the polycrystalline layer. Subsequently, the method includes exposing the doped polycrystalline layer to a laser anneal to activate the dopant in an upper portion of the polycrystalline layer.
REFERENCES:
patent: 4834831 (1989-05-01), Nishizawa et al.
patent: 5112439 (1992-05-01), Reisman et al.
patent: 5273930 (1993-12-01), Steele et al.
patent: 5294286 (1994-03-01), Nishizawa et al.
patent: 5372860 (1994-12-01), Fehlner et al.
patent: 5374570 (1994-12-01), Nasu et al.
patent: 5399506 (1995-03-01), Tsukamoto
patent: 5469806 (1995-11-01), Mochizuki et al.
patent: 5480818 (1996-01-01), Matsumoto et al.
patent: 5527733 (1996-06-01), Nishizawa et al.
patent: 5674304 (1997-10-01), Fukada et al.
patent: 5693139 (1997-12-01), Nishizawa et al.
patent: 5796116 (1998-08-01), Nakata et al.
patent: 5807792 (1998-09-01), Ilg et al.
patent: 5906680 (1999-05-01), Meyerson
patent: 5908307 (1999-06-01), Talwar et al.
patent: 5966605 (1999-10-01), Ishida
patent: 6025627 (2000-02-01), Forbes et al.
patent: 6042654 (2000-03-01), Comita et al.
patent: 6100171 (2000-08-01), Ishida
patent: 6159852 (2000-12-01), Nuttall et al.
patent: 6232196 (2001-05-01), Raaijmakers et al.
patent: 6284686 (2001-09-01), Marlor
patent: 6291319 (2001-09-01), Yu et al.
patent: 6303476 (2001-10-01), Hawryluk et al.
patent: 6335280 (2002-01-01), Van Der Jeugd
patent: 6348420 (2002-02-01), Raaijmakers et al.
patent: 6352945 (2002-03-01), Matsuki et al.
patent: 6358829 (2002-03-01), Yoon et al.
patent: 6383955 (2002-05-01), Matsuki et al.
patent: 6383956 (2002-05-01), Hawryluk et al.
patent: 6387761 (2002-05-01), Shih et al.
patent: 6410463 (2002-06-01), Matsuki
patent: 6451119 (2002-09-01), Sneh et al.
patent: 6458718 (2002-10-01), Todd
patent: 6489241 (2002-12-01), Thilderkvist et al.
patent: 6544900 (2003-04-01), Raaijmakers et al.
patent: 6559520 (2003-05-01), Matsuki et al.
patent: 6562720 (2003-05-01), Thilderkvist et al.
patent: 6635588 (2003-10-01), Hawryluk et al.
patent: 6645838 (2003-11-01), Talwar et al.
patent: 6784101 (2004-08-01), Yu et al.
patent: 6797558 (2004-09-01), Nuttall et al.
patent: 6821825 (2004-11-01), Todd
patent: 2001/0020712 (2001-09-01), Raaijmakers et al.
patent: 2001/0024871 (2001-09-01), Yagi
patent: 2001/0046567 (2001-11-01), Matsuki et al.
patent: 2001/0055672 (2001-12-01), Todd
patent: 2002/0019148 (2002-02-01), Hawryluk et al.
patent: 2002/0022294 (2002-02-01), Hawryluk et al.
patent: 2002/0090818 (2002-07-01), Thilderkvist et al.
patent: 2002/0093042 (2002-07-01), Oh et al.
patent: 2002/0145168 (2002-10-01), Bojarczuk, Jr. et al.
patent: 2002/0168868 (2002-11-01), Todd
patent: 2002/0173113 (2002-11-01), Todd
patent: 2002/0173130 (2002-11-01), Pomerede et al.
patent: 2002/0197831 (2002-12-01), Todd et al.
patent: 2003/0022528 (2003-01-01), Todd
patent: 2003/0036268 (2003-02-01), Brabant et al.
patent: 2003/0045074 (2003-03-01), Seibel et al.
patent: 2003/0082300 (2003-05-01), Todd et al.
patent: 2003/0189208 (2003-10-01), Law et al.
patent: 2004/0033674 (2004-02-01), Todd
patent: 2004/0226911 (2004-11-01), Dutton et al.
patent: 2004/0253776 (2004-12-01), Hoffmann et al.
patent: 2005/0079691 (2005-04-01), Kim et al.
patent: 1 150 345 (2001-10-01), None
patent: 58-098917 (1983-06-01), None
patent: 62-171999 (1987-07-01), None
patent: 63-062313 (1988-03-01), None
patent: 01-270593 (1989-10-01), None
patent: 03-286522 (1991-12-01), None
patent: 05-047665 (1993-02-01), None
patent: 05-102189 (1993-04-01), None
patent: 02-172895 (1993-07-01), None
patent: 2001-111000 (2001-04-01), None
patent: 2001-189312 (2001-05-01), None
patent: WO 98/20524 (1998-05-01), None
patent: WO 01/41544 (2001-06-01), None
patent: WO 01/71787 (2001-09-01), None
patent: WO 02/064853 (2002-08-01), None
patent: WO 02/065508 (2002-08-01), None
patent: WO 02/065516 (2002-08-01), None
patent: WO 02/065517 (2002-08-01), None
patent: WO 02/065525 (2002-08-01), None
patent: WO 02/080244 (2002-10-01), None
patent: WO 02/097864 (2002-12-01), None
Stanley Wolf Ph.D. and Richard N. Tauber Ph.D. in Silicon Processing for the VLSI Era, vol. 1: Process Technology, Lattice Press, 1986, pp. 264-265.□ □.
Choi, et al. “Stability of TiB2as a Diffusion Barrier on Silicon,” J. Electrochem. Soc., vol. 138, No. 10, Oct. 1991.
Debusschere, et al. “Importance of determining the polysilicon dopant profile during process development,” J. Vac. Sci. Technol. B 14(1), Jan./Feb. 1996.
Earles, et al. “Nonmelt Laser Annealing of 5-KeV and 1-KeV Boron-Implanted Silicon,” IEEE Transactions on Electron Devices, vol. 49, No. 7, Jul. 2002.
Jeong, et al. “Growth and Characterization of Aluminum Oxide Al2O3Thin Films by Plasma-assisted Atomic Layer Controlled Deposition,” J. Korean Inst. Met. Mater., vol. 38, No. 10, Oct. 2000.
Jeong, et al. “Plasma-assisted Atomic Layer Growth of High-Quality Aluminum Oxide Thin Films,” Jpn. J. Appl. Phys. 1, Regul. Pap. Short Notes, vol. 40, No. 1, Jan. 2001.
Lee, et al. “Cyclic Technique for the Enhancement of Highly Oriented Diamond Film Growth,” Thin Solid Films 303 (1997) 264-269.
Paranjpe, et al. “Atomic Layer Deposition of AlOxfor Thin Film Head Gap Applications,” J. Electrochem. Soc., vol. 148, No. 9, Sep. 2001.
Talwar, et al. “Junction sealing unsing lasers for thermal annealing,” Solid State Technology, vol. 46, Issue 7, Jul. 2003.
Yamshita, et al. “Kinetics of Boron Activation by Flash Lamp Annealing,” Extend Abstracts of the 2003 International Conference of Solid State Devices and Materials, Tokyo, 2003, pp. 742-743.
International Search Report mailed Feb. 22, 2005 for PCT/US2004/030872 (AMAT/8539-PCT).
Kamins, et al. “Kinetics of selective epitaxial deposition of Si1-xGex”, Applied Physics Letters, American Institute pf Physics. New York, US, vol. 61, No. 6, Aug. 10, 1992, pp. 669-671.
Menon, et al. “Loading effect in SiGe layers grown by dichlorosilane- and silane-based epitaxy”, Journal of Applied Physics, American Institute of Physics. New York, US, vol. 90, No. 9, Nov. 1, 2001, pp. 4805-4809.
Sedgwick, et al. “Selective SiGe and heavily As doped Si deposited at low temperature by atmospheric pressure chemical vapor deposition”, Journal of Vacuum Science and Technology: Part B, American Institute of Physics. New York, US, vol. 11, No. 3, May 1, 1993, pp. 1124-1128.
Uchino, et al. “A Raised Source/Drain Technology Using In-situ P-doped SiGe and B-doped Si for 0.1 μm CMOS ULSIs”, Electron Devices Meeting, 1997. Technical Digest, International Washington, DC, USA Dec. 7-10, 1991, New York, NY, USA, IEEE, US, Dec. 7, 1997, pp. 479-482.
International Search Report dated Jun. 23, 2005 regarding International Application No. PCT/US2005/004318 (AMAT/8830-PCT).
Goto, et al. “Ultra-Low Contact Resistance for Deca-nm MOSFETs by Laser Annealing”, Electron Devices Meeting, 1999. IEDM Technical Digest. International Washington, DC, USA Dec. 5-8, 1999, Piscataway, NJ, USA, IEEE, US, Dec. 5, 1999 (Dec. 2, 1999), pp. 931-933, XP010372206.
Ahmed Khaled Z.
Cunningham Kevin L.
Foad Majeed
Leung Toi Yue Becky
Liang Haifan
Applied Materials Inc.
Brewster William M.
Patterson & Sheridan LLP
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