Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-07-11
2006-07-11
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S361000, C257S362000, C257S197000, C257S556000, C257S564000, C257S560000, C257S557000, C257SE27053, C257SE27055
Reexamination Certificate
active
07075156
ABSTRACT:
Electrostatic discharge (ESD) devices for protection of integrated circuits are described. ESD devices may be configured to provide uniform breakdown of finger regions extending through a first region of a substrate having a first conductivity type and into a second region of the substrate more lightly doped with impurities of the first conductivity type. Such an EDS device may include a collector region having a middle region highly doped with impurities of the first conductivity type. The middle region may be proximate to a layer that is lightly doped with impurities of the first conductivity type and a layer that is doped with impurities of the second conductivity type. The collector region may decrease the breakdown voltage of the EDS device. The lightly doped region may be eliminated in the collector region and an interlayer insulating layer is formed in contact with the top side regions and the middle region.
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U.S. Appl. No. 10/412,099, Office Action mailed Jan. 28, 2004.
U.S. Serial No. 10/412,076, Application filed Apr. 9, 2003.
Li Choy
Zhang Xin-Yi
Marvell International Ltd.
Nguyen Joseph
Parker Kenneth
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