LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes;

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing

System for controlling growth of a silicon crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

System for increasing charge size for single crystal silicon...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

System for manufacturing a single-crystal ingot employing...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing

System for monitoring the growth of crystalline films on station

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

System for monitoring the growth of crystalline films on station

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing

System for oxygen precipitation control in silicon crystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing

System for performing crystallization trials

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state

System for polymer crystallization

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state

System for polymer crystallization

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state

System for pulling-up monocrystal and method of exhausting silic

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state

System for stabilizing dendritic web crystal growth

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

Systems and methods for forming strontium- and/or...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Systems and methods for forming strontium- and/or...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes joining independent crystals

Systems and methods for generating images of crystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing

Systems and methods for inducing crystallization of thin...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

Systems and methods for measuring and reducing dust in...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Systems and methods for synthesis of extended length...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Fully-sealed or vacuum-maintained chamber

Systems and methods for the production of highly tetrahedral...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Tantalum based crucible