Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing
Patent
1995-08-21
1997-03-04
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
With means for measuring, testing, or sensing
117 20, 117200, 117208, 117916, C30B 3500
Patent
active
056075073
ABSTRACT:
A method for controlling oxygen precipitation (106) in a silicon crystal (12) grown according to the Czochralski silicon crystal growing technique which includes the steps of forming a cylindrical portion (22) of the silicon crystal (12) from a reservoir of molten silicon (24) according to the Czochralski silicon crystal growing technique. The method includes the steps of terminating the Czochralski silicon crystal growing technique by forming a first tapered portion (101) in silicon crystal (12) at a predetermined rate. A second tapered portion (102) includes a cascaded middle portion (108) that connects to the first tapered portion (101) and that concentrates oxygen precipitation (106) within cascaded middle portion (108) and away from the cylindrical portion (22) of silicon crystal (12). At least a third tapered portion (104) is formed for separating silicon crystal (12) from molten silicon (24).
REFERENCES:
patent: 4040895 (1972-08-01), Patrick et al.
patent: 4436577 (1984-03-01), Frederick et al.
patent: 4511428 (1985-04-01), Ghosh et al.
patent: 5178720 (1993-01-01), Frederick
Bell Weldon J.
Grimes H. Michael
Brady III W. James
Donaldson Richard L.
Garrett Felisa
Kunemund Robert
Swayze, Jr. W. Daniel
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