Tantalum based crucible

Details Tantalum based crucible Tantalum based crucible

2006-06-06

2006-06-06

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S107000, C117S109000, C117S952000

Reexamination Certificate

active

07056383

ABSTRACT:
A crucible is provided that is thermally stable at high temperatures and is suitable for use in the growth of large, bulk AlN, AlxGa1-xN or other nitride single crystals. The crucible is comprised of specially treated tantalum. During the initial treatment, the walls of the crucible are carburized, thus achieving a crucible that can be subjected to high temperatures without deformation. Once the carburization of the tantalum is complete, the crucible undergoes further treatment to protect the surfaces that are expected to come into contact with nitride vapors during crystal growth with a layer of TaN. If the crucible is to be used with a graphite furnace, only the inner surfaces of the crucible are converted to TaN, thus keeping TaC surfaces adjacent to the graphite furnace elements. If the crucible is to be used with a non-graphite furnace, both the inner and outer surfaces of the crucible are converted to TaN.

REFERENCES:
patent: 2854364 (1958-09-01), Lely
patent: 4125756 (1978-11-01), Hierholzer et al.
patent: 4147572 (1979-04-01), Vodakov et al.
patent: 4302508 (1981-11-01), Hierholzer et al.
patent: 4556436 (1985-12-01), Addamiano
patent: 4866005 (1989-09-01), Davis et al.
patent: 5433167 (1995-07-01), Furukawa et al.
patent: 5964944 (1999-10-01), Sugiyama et al.
patent: 6261363 (2001-07-01), Vodakov et al.
patent: 6428621 (2002-08-01), Vodakov et al.
patent: 6508880 (2003-01-01), Vodakov et al.
patent: 6534026 (2003-03-01), Vodakov et al.
patent: 6537371 (2003-03-01), Vodakov et al.
patent: 6562130 (2003-05-01), Vodakov et al.
patent: 6562131 (2003-05-01), Vodakov et al.
patent: 3230727 (1984-02-01), None
patent: 11116399 (1997-10-01), None
patent: 11116398 (1999-04-01), None
patent: 403275 (1973-07-01), None
patent: WO 2001004389 (2001-10-01), None
Karpov et al, Analysis of Sublimation Growth of Bulk SiC Crystals in Tantalum Container, Journal of Crystal Growth, 2000, pp. 347-351, vol. 211.
Karpov et al, Excess Phase Formation During Sublimation Growth of Silicon Carbide, International Conference on Silicon Carbide and Related Materials, 1995, pp. 1-4, vol. ICSCRM-95.
Mokhov et al, Growing of Epitaxial Layers of Silicon Carbide, Vysokochistie Veshchestva, 1992, pp. 98-105, No. 3.
Mokhov et al, Growth of Silicon Carbide Bulk Crystals by the Sublimation Sandwich Method, Materials Science and Engineering, 1997, pp. 317-323, vol. B47.
Mokhov et al, SiC Growth in Tantalum Containers by Sublimation Sandwich Method, Journal of Crystal Growth, Apr. 3, 1997, pp. 254-258, vol. 181.
D. Hoffman et al, Use of Ta Container Material for Quality Improvement of SiC Crystals Grown by the Sublimation Technique, Int'l Conference on Silicon Carbide & Related Materials, 1995, pp. 1-4, vol. ICSCRM-95.

Affiliated with

Also associated with

Rating

Tantalum based crucible does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Tantalum based crucible, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Tantalum based crucible will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3695387