System for increasing charge size for single crystal silicon...

Details System for increasing charge size for single crystal silicon... System for increasing charge size for single crystal silicon...

2005-04-05

2005-04-05

Hiteshew, Felisa (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S217000, C117S218000, C117S222000

Reexamination Certificate

active

06875269

ABSTRACT:
Methods and apparatuses are useful to add polycrystalline rod material to the crucible of a CZ furnace and thereby increase utilization of crucible volume in the production of large diameter CZ silicon ingots. Multiple silicon rods are melted in the CZ furnace, and the subsequent production of a single crystal silicon ingot can occur without operating the isolation valve or opening the upper chamber of the furnace.

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