LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes; ,Forming from vapor or gaseous state

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Growth of bulk single crystals of aluminum nitride from a melt

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Growth of bulk single crystals of aluminum nitride: silicon carb

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Growth of colorless silicon carbide crystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Growth of doped semiconductor monolayers

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Growth of epitaxial semiconductor material with improved...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Growth of textured gallium nitride thin films and nanowires...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Growth of textured gallium nitride thin films on...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Fully-sealed or vacuum-maintained chamber

Growth of ultra-high purity silicon carbide crystals in an...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Growth of very uniform silicon carbide epitaxial layers