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Mosfet with buried contact and air-gap gate structure

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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Mosfet with buried element isolation regions

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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MOSFET with electrostatic discharge protection structure and...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device
Reexamination Certificate

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Mosfet with fully overlapped lightly doped drain structure and m

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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MOSFET with graded gate oxide layer

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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MOSFET with gradiently doped polysilicon gate electrode

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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MOSFET with high angle sidewall gate and contacts for...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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MOSFET with high dielectric constant gate insulator and...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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MOSFET with isolation structure and fabrication method thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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MOSFET with lateral resistor ballasting

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate

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MOSFET with plural channels for punch through and threshold volt

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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MOSFET with raised STI isolation self-aligned to the gate stack

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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MOSFET with reduced leakage current

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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MOSFET with reduced threshold voltage and on resistance and...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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MOSFET with sidewall spacer on gate section

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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MOSFET with SiGe source/drain regions and epitaxial gate...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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MOSFET with solid phase diffusion source

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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MOSFET with solid phase diffusion source

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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MOSFET with suppressed gate-edge fringing field effect

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate

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MOSFET with tunneling insulation and fabrication method thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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