Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-07-26
1994-12-13
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257346, 257408, 257900, H01L 2978
Patent
active
053731786
ABSTRACT:
After forming a low concentration impurity layer by ion implanting an impurity into a semiconductor substrate 1 by using a gate electrode 7 on the semiconductor substrate 1 as a mask, side walls composed of films having a large etching resistivity with respect to an interlayer dielectric film 13 are formed on side surfaces of the gate electrode 7 and a gate oxide film 6 located beneath the gate electrode 7. Subsequently, the interlayer dielectric film 13 is formed over the whole surface, and a contact hole 18 having a part of side walls constituted by the first-mentioned side walls 8 and a field oxide film 2 is formed. A high concentration impurity layer is formed by implanting an impurity through the contact hole 18.
REFERENCES:
patent: 4786609 (1988-11-01), Chen
patent: 4835112 (1989-05-01), Pfiester et al.
patent: 4908326 (1990-03-01), Ma et al.
patent: 4971922 (1990-11-01), Watabe et al.
patent: 5023679 (1991-06-01), Shibata
patent: 5091763 (1992-02-01), Sanchez
patent: 5132758 (1992-07-01), Minami et al.
patent: 5182619 (1993-01-01), Pfiester
patent: 5254867 (1993-10-01), Fukuda et al.
Mizuno et al. "Si.sub.3 N.sub.4 /SIO.sub.2 Spacer Induced High Reliability in LDDMOSFET and Its Simple Degradation Model", IEEE International Electron Devices Meeting (Dec. 1988), Digest pp. 234-237.
Seiki Ogura et al., "IEEE Transactions on Electron Devices", Design and Characteristics of the Lightly Doped Drain-Source (LDD) Insulated Gate Field-Effect Transistor, vol. ED-27, No. 8, Aug., 1980, pp. 1359-1367.
T. Mizuno et al., "IEDM Technical Digest", High Dielectric LDD Spacer Technology for High Performance MOSFET Using Gate-Fringing Field Effects, 1989, pp. 26.1.1-26.1.4.
Kinoshita Eita
Motoyoshi Makoto
Kawasaki Steel Corporation
Munson Gene M.
LandOfFree
MOSFET with sidewall spacer on gate section does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with MOSFET with sidewall spacer on gate section, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOSFET with sidewall spacer on gate section will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1194976