MOSFET with tunneling insulation and fabrication method thereof

Details MOSFET with tunneling insulation and fabrication method thereof MOSFET with tunneling insulation and fabrication method thereof

1997-09-11

1999-09-07

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257322, 257335, 257401, 438194, 438263, 438264, H01L 2972

Patent

active

059491035

ABSTRACT:
A tunneling insulation film MOSFET and a fabrication method for a tunneling insulation film MOSFET avoid a short channel effect and prevent a punchthrough phenomenon by forming a tunneling insulation film between a channel area and one of source area and a drain area. The fabrication method can include the steps of forming a gate oxide film and a gate electrode on a silicon substrate, forming a hole perpendicular to the surface of the silicon substrate along one side of the gate electrode, forming a tunneling oxide film in the hole, and forming a source and a drain by implanting an impurity into the silicon substrate using the gate electrode as a mask.

REFERENCES:
patent: 5747847 (1998-05-01), Morinaka et al.

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