MOSFET with solid phase diffusion source

Details MOSFET with solid phase diffusion source MOSFET with solid phase diffusion source

1994-12-02

1997-12-16

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257327, H01L 2976

Patent

active

056988818

ABSTRACT:
A MOS type semiconductor device has a gate whose length is 170 nm (0.17 .mu.m) or less, a junction depth of source and drain diffusion layers in the vicinity of a channel is 22 nm or less, and a concentration of impurities at the surface in the source and drain diffusion layers is made to 10.sup.20 cm.sup.-3 or more. Such structure is obtained using solid phase diffusion using heat range from 950.degree. C. to 1050.degree. C. and/or narrowing gate width by ashing or etching. The other MOS type semiconductor device is characterized in that the relationship between the L.sub.eff >0.69 x.sub.j -6.17.

REFERENCES:
patent: 4356623 (1982-11-01), Hunter
patent: 4992388 (1991-02-01), Pfiester
patent: 5061649 (1991-10-01), Takenouchi et al.
patent: 5283449 (1994-02-01), Ooka
patent: 5434440 (1995-07-01), Yoshitomi et al.

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