Ultra high density phase change memory having improved...

Details Ultra high density phase change memory having improved... Ultra high density phase change memory having improved...

2008-04-03

2010-06-29

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S004000, C257S734000, C257SE31029, C438S023000, C438S131000, C438S776000

Reexamination Certificate

active

07745809

ABSTRACT:
Embodiments of the present invention provide an apparatus comprising a substrate comprising an emitter layer and at least one emitter interface adjacent to the emitter layer, and a metal protective layer on a top surface of the at least one emitter interface. A method of manufacturing such an apparatus is also disclosed. The method may include performing plasma nitridation directed at column micro-trench strips. Other embodiments are also described.

REFERENCES:
patent: 7422926 (2008-09-01), Pellizzer et al.
patent: 2005/0006681 (2005-01-01), Okuno
patent: 2005/0024933 (2005-02-01), Pellizzer et al.
patent: 2006/0034116 (2006-02-01), Lam et al.

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