Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2008-07-29
2008-07-29
Pham, Thanh V (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S041000, C257S044000, C257S132000, C257S503000, C257S734000, C257S735000, C257S736000, C257S746000, C257S750000, C257S758000, C257S773000, C257S774000, C257S776000, C257S785000
Reexamination Certificate
active
07405419
ABSTRACT:
A method of forming and a device including an interconnect structure having a unidirectional electrical conductive material is described. The unidirectional conductive material may overlie interconnect materials, and/or may surround interconnect materials, such as by lining the walls and base of a trench and via. The unidirectional conductive material may be configured to conduct electricity in a direction corresponding to a projection to or from a contact point and conductive material overlying the unidirectional conductive material, but have no substantial electrical conductivity in other directions. Moreover, the unidirectional conductive material may be electrically conductive in a direction normal to a surface over which it is formed or in directions along or across a plane, but have no substantial electrical conductivity in other directions. Finally, the unidirectional conductive material may have properties tending to reduce metal diffusion, reduce electron migration, provide adhesion or bonding, and/or act as an etch stop.
REFERENCES:
patent: 5897368 (1999-04-01), Cole et al.
patent: 6121688 (2000-09-01), Akagawa
Golzarian Reza M.
Meagley Robert P.
Moinpour Mansour
Morimoto Seiichi
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Pham Thanh V
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