Use of Ta-capped metal line to improve formation of memory...

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S002000, C257S040000, C365S148000, C365S163000, C365S174000

Reexamination Certificate

active

11251291

ABSTRACT:
Disclosed are methods for deposition of improved memory element films for semiconductor devices. The methods involve providing a hard mask over an upper surface of a metal line of a semiconductor substrate where vias are to be placed, recess etching the mask substantially in all upper surfaces except where vias are to be placed, depositing a Ta-containing capping layer over substantially all the metal line surfaces except the surface where vias are to be placed, polishing the Ta-containing capping layer to produce a damascened Ta-containing cap while exposing the metal line at the via forming surface, depositing a dielectric layer, patterning the dielectric layer to form a via, and depositing memory element films. The improved Ta—Cu interface of the subject invention mitigates and/or eliminates lateral growth of memory element films and copper voiding under the dielectric layer at the top surface of the metal line, and thereby enhances reliability and performance of semiconductor devices.

REFERENCES:
patent: 6656763 (2003-12-01), Oglesby et al.
patent: 6686263 (2004-02-01), Lopatin et al.
patent: 6746971 (2004-06-01), Ngo et al.
patent: 6753247 (2004-06-01), Okoroanyanwu et al.
patent: 6768157 (2004-07-01), Krieger et al.
patent: 6770905 (2004-08-01), Buynoski et al.
patent: 6773954 (2004-08-01), Subramanian et al.
patent: 6781868 (2004-08-01), Bulovic et al.
patent: 6787458 (2004-09-01), Tripsas et al.
patent: 6803267 (2004-10-01), Subramanian et al.
patent: 6825060 (2004-11-01), Lyons et al.
patent: 6852586 (2005-02-01), Buynoski et al.
patent: 6858481 (2005-02-01), Krieger et al.
patent: 6864522 (2005-03-01), Krieger et al.
patent: 6878961 (2005-04-01), Lyons et al.
patent: 7129133 (2006-10-01), Avanzino et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Use of Ta-capped metal line to improve formation of memory... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Use of Ta-capped metal line to improve formation of memory..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Use of Ta-capped metal line to improve formation of memory... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3903042

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.