Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2007-10-30
2007-10-30
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S002000, C257S040000, C365S148000, C365S163000, C365S174000
Reexamination Certificate
active
11251291
ABSTRACT:
Disclosed are methods for deposition of improved memory element films for semiconductor devices. The methods involve providing a hard mask over an upper surface of a metal line of a semiconductor substrate where vias are to be placed, recess etching the mask substantially in all upper surfaces except where vias are to be placed, depositing a Ta-containing capping layer over substantially all the metal line surfaces except the surface where vias are to be placed, polishing the Ta-containing capping layer to produce a damascened Ta-containing cap while exposing the metal line at the via forming surface, depositing a dielectric layer, patterning the dielectric layer to form a via, and depositing memory element films. The improved Ta—Cu interface of the subject invention mitigates and/or eliminates lateral growth of memory element films and copper voiding under the dielectric layer at the top surface of the metal line, and thereby enhances reliability and performance of semiconductor devices.
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Avanzino Steven C.
Marathe Amit P.
Advanced Micro Devices , Inc.
Amin Turocy & Calvin LLP
Spansion LLC
Tran Tan
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