Shikayuki Ochi

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High-breakdown-voltage resistance element for integrated circuit

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High-breakdown-voltage semiconductor device

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High-voltage circuit for insulated gate field-effect transistor

Electrical transmission or interconnection systems – Personnel safety or limit control features – Interlock
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Insulated gate field effect transistor with source field shield

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Insulated gate type field effect semiconductor device and a circ

Amplifiers – With semiconductor amplifying device – Including push-pull amplifier
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Profile ID: LFUS-PAI-P-211635

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