High-voltage circuit for insulated gate field-effect transistor

Electrical transmission or interconnection systems – Personnel safety or limit control features – Interlock

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307296R, 307584, 330277, H03K 3353, H03K 17687, H03F 316, H01L 2978

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active

043170552

ABSTRACT:
A high-voltage circuit for insulated gate field-effect transistors (MOSFETs) is provided wherein two MOSFETs are connected in series, the source and gate of the first MOSFET being respectively used as a source terminal and gate terminal of the high-voltage circuit, the drain of the second MOSFET being used as a drain terminal of the circuit. First and second resistors are connected in series between the source terminal and the drain terminal, and a biasing voltage supply is connected between the juncture of both the resistors and the gate of the second MOSFET. By virtue of these connections the "on" resistance of the high-voltage circuit is improved due to the effect of the biasing voltage effect in bringing the second MOSFET into an "on" condition.

REFERENCES:
patent: 3818245 (1974-06-01), Suzuki et al.
patent: 3986060 (1976-10-01), Nishizawa et al.
patent: 4100438 (1978-07-01), Yokoyama
"Cascode Field Effect Transistor Applications"; Amelco Semiconductor; Division of Teledyne, Inc.; Tech. Notes No. 5, pp. 1-14; 10/1963.

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