Patent
1980-06-03
1983-12-27
Clawson, Jr., Joseph E.
357 53, 357 54, 357 23, H01L 2702
Patent
active
044234333
ABSTRACT:
A high-breakdown-voltage resistance element comprises a semiconductor body, an impurity layer disposed in a surface region of the semiconductor body to provide a resistor body, a first electrode connected to one end of the resistor body through a contact hole in a first insulating film formed on the surface of the semiconductor body, and a second electrode connected to the other end of the resistor body through another contact hole in the insulating film. A second insulating film is formed on the first and second electrodes, and a third electrode is connected to the first electrode through a contact hole in the second insulating film, so that the entire surface of the resistor body and adjacent areas are covered with the first, second and third electrodes.
REFERENCES:
patent: 3518494 (1970-06-01), James
patent: 3573571 (1971-04-01), Brown et al.
patent: 3593068 (1971-07-01), Rosier
patent: 3683491 (1972-08-01), Nelson et al.
patent: 4040083 (1977-08-01), Saiki et al.
patent: 4172260 (1979-10-01), Okabe et al.
patent: 4246502 (1981-01-01), Kubinec
patent: 4263518 (1981-04-01), Ballatore et al.
patent: 4309626 (1982-01-01), Kudo
Texas Instruments New Product Review, Wescon, 1964, p. 11.
Imaizumi Ichiro
Kimura Masatoshi
Koda Toyomasa
Ochi Shikayuki
Yamaguchi Takashi
Clawson Jr. Joseph E.
Hitachi , Ltd.
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